Advanced Nano- and Piezoelectric Materials and Their by Ivan A. Parinov

By Ivan A. Parinov

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On the other hand, the С-face ((000 1 ) surface) is characterized by a higher concentration of trap layers [63]. The SiC oxidation, using oxygen isotopes 16O2 and 18O2, gives a possibility to suggest a SiC oxidation mechanism according to the surface used [85, 86]. The SiC surface was first oxidized by isotopes 16O2, and then was affected by 18O2. In agreement with oxygen adsorption/desorption dependence on oxidation rate and temperature [8], four processes were revealed to occur during silicon carbide oxidation for the polar C-face: (i) oxygen adsorption to the silicon adlayer, (ii) transfer to the back bond of the Si adlayer, (iii) oxygen desorption from the silicate adlayer, and (iv) transfer from the silicate adlayer to the back bond of the Si adlayer.

E. radiation sources. By means of varying their parameters we can change the photo-stimulated reaction occurring, achieving the desired growth rate and acceptable parameters of forming dielectric [44]. The possibility of the oxidation temperature reducing makes rapid thermal annealing method really promising for use in low-temperature technology of modern integrated circuits and microsystem fabrication. To improve CMOS VLSI performance we need gate dielectric with a required thickness of 5  10 nm.

Reference [81] overviews the photoluminescence of the SiO2 layers, formed by the anodic electrochemical oxidation of β-SiС films. It was demonstrated that the oxide film thickness increases with increasing the sample oxidation time. However, all the silicon oxide films kept traces of carbon uniformly distributed through the volume. The authors of [81] suggest two explanations of the observed photoluminescence mechanism: (1) The electrochemical oxide, formed on the SiC film, contains certain local centers (complexes).

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